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Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU

RS Stock No.: 171-2410Brand: ToshibaManufacturers Part No.: SSM6N7002KFU
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Country of Origin

Thailand

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Stock information temporarily unavailable.

₪ 1,170.00

₪ 0.39 Each (On a Reel of 3000) (ex VAT)

₪ 1,368.90

₪ 0.456 Each (On a Reel of 3000) (inc. VAT)

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU

₪ 1,170.00

₪ 0.39 Each (On a Reel of 3000) (ex VAT)

₪ 1,368.90

₪ 0.456 Each (On a Reel of 3000) (inc. VAT)

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
3000 - 3000₪ 0.39₪ 1,170.00
6000 - 6000₪ 0.375₪ 1,125.00
9000+₪ 0.36₪ 1,080.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Country of Origin

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more