Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

RS Stock No.: 144-5260Brand: ToshibaManufacturers Part No.: SSM3J334R,LF(T
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Technical documents

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

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₪ 53.10

₪ 1.77 Each (In a Pack of 30) (ex VAT)

₪ 62.13

₪ 2.071 Each (In a Pack of 30) (inc. VAT)

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

30

Available in multiples of 30
30₪ 53.10
60₪ 106.20
90₪ 159.30
120₪ 212.40
150₪ 254.25
180₪ 305.10
210₪ 355.95
240₪ 406.80
270₪ 457.65
300₪ 508.50
330₪ 559.35
360₪ 610.20
390₪ 661.05
420₪ 711.90
450₪ 762.75

₪ 53.10

₪ 1.77 Each (In a Pack of 30) (ex VAT)

₪ 62.13

₪ 2.071 Each (In a Pack of 30) (inc. VAT)

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

Stock information temporarily unavailable.

30

Available in multiples of 30
30₪ 53.10
60₪ 106.20
90₪ 159.30
120₪ 212.40
150₪ 254.25
180₪ 305.10
210₪ 355.95
240₪ 406.80
270₪ 457.65
300₪ 508.50
330₪ 559.35
360₪ 610.20
390₪ 661.05
420₪ 711.90
450₪ 762.75

Stock information temporarily unavailable.

quantityUnit pricePer Pack
30 - 120₪ 1.77₪ 53.10
150+₪ 1.695₪ 50.85

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more