Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

RS Stock No.: 890-2686Brand: ToshibaManufacturers Part No.: 2SK3564,S5Q(J
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Forward Diode Voltage

1.9V

Country of Origin

Malaysia

Product details

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

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₪ 60.15

₪ 12.03 Each (In a Pack of 5) (ex VAT)

₪ 70.38

₪ 14.075 Each (In a Pack of 5) (inc. VAT)

Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

5

Available in multiples of 5
5₪ 60.15
10₪ 120.30
15₪ 180.45
20₪ 240.60
25₪ 298.88
30₪ 358.65
35₪ 418.42
40₪ 478.20
45₪ 537.98
50₪ 594.75
55₪ 654.22
60₪ 713.70
65₪ 773.18
70₪ 832.65
75₪ 892.12

₪ 60.15

₪ 12.03 Each (In a Pack of 5) (ex VAT)

₪ 70.38

₪ 14.075 Each (In a Pack of 5) (inc. VAT)

Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

Stock information temporarily unavailable.

5

Available in multiples of 5
5₪ 60.15
10₪ 120.30
15₪ 180.45
20₪ 240.60
25₪ 298.88
30₪ 358.65
35₪ 418.42
40₪ 478.20
45₪ 537.98
50₪ 594.75
55₪ 654.22
60₪ 713.70
65₪ 773.18
70₪ 832.65
75₪ 892.12

Stock information temporarily unavailable.

quantityUnit pricePer Pack
5 - 20₪ 12.03₪ 60.15
25 - 45₪ 11.955₪ 59.78
50 - 95₪ 11.895₪ 59.48
100 - 245₪ 11.835₪ 59.18
250+₪ 11.79₪ 58.95

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Forward Diode Voltage

1.9V

Country of Origin

Malaysia

Product details

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more