Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
15 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
791 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +2 V
Typical Gate Charge @ Vgs
11.25 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Length
4.9mm
Width
3.91mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.58mm
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P.O.A.
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P.O.A.
5
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
15 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
791 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +2 V
Typical Gate Charge @ Vgs
11.25 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Length
4.9mm
Width
3.91mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.58mm