Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT

RS Stock No.: 133-0158Brand: Texas InstrumentsManufacturers Part No.: CSD87335Q3DT
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

6 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

11 nC, 19 nC

Width

3.4mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.5mm

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

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₪ 15.704

Each (In a Pack of 5) (ex VAT)

₪ 18.374

Each (In a Pack of 5) (inc VAT)

Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT
Select packaging type

₪ 15.704

Each (In a Pack of 5) (ex VAT)

₪ 18.374

Each (In a Pack of 5) (inc VAT)

Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 10₪ 15.704₪ 78.52
15 - 45₪ 13.523₪ 67.61
50 - 245₪ 12.348₪ 61.74
250 - 495₪ 11.145₪ 55.73
500+₪ 9.887₪ 49.43

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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

6 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

11 nC, 19 nC

Width

3.4mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.5mm

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more