Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
11 nC, 19 nC
Width
3.4mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.5mm
Product details
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block
MOSFET Transistors, Texas Instruments
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₪ 15.704
Each (In a Pack of 5) (ex VAT)
₪ 18.374
Each (In a Pack of 5) (inc VAT)
5
₪ 15.704
Each (In a Pack of 5) (ex VAT)
₪ 18.374
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | ₪ 15.704 | ₪ 78.52 |
15 - 45 | ₪ 13.523 | ₪ 67.61 |
50 - 245 | ₪ 12.348 | ₪ 61.74 |
250 - 495 | ₪ 11.145 | ₪ 55.73 |
500+ | ₪ 9.887 | ₪ 49.43 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
11 nC, 19 nC
Width
3.4mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.5mm
Product details
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block