Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Width
3.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block
MOSFET Transistors, Texas Instruments
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₪ 13.802
Each (In a Pack of 5) (ex VAT)
₪ 16.148
Each (In a Pack of 5) (inc VAT)
5
₪ 13.802
Each (In a Pack of 5) (ex VAT)
₪ 16.148
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | ₪ 13.802 | ₪ 69.01 |
15 - 45 | ₪ 11.257 | ₪ 56.29 |
50 - 245 | ₪ 10.25 | ₪ 51.25 |
250 - 495 | ₪ 9.229 | ₪ 46.15 |
500+ | ₪ 8.167 | ₪ 40.83 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Width
3.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block