Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
₪ 137.70
₪ 9.18 Each (Supplied on a Reel) (ex VAT)
₪ 161.11
₪ 10.741 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
15
₪ 137.70
₪ 9.18 Each (Supplied on a Reel) (ex VAT)
₪ 161.11
₪ 10.741 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
15
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
15 - 45 | ₪ 9.18 | ₪ 45.90 |
50 - 245 | ₪ 8.22 | ₪ 41.10 |
250 - 495 | ₪ 7.275 | ₪ 36.38 |
500+ | ₪ 6.525 | ₪ 32.62 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details