Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2.39e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si
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P.O.A.
P-Channel MOSFET, 20 A, 20 V, 6-Pin WSON Texas Instruments CSD25310Q2
Select packaging type
Standard
25
P.O.A.
P-Channel MOSFET, 20 A, 20 V, 6-Pin WSON Texas Instruments CSD25310Q2
Stock information temporarily unavailable.
Select packaging type
Standard
25
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2.39e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si