Texas Instruments N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS

RS Stock No.: 827-4919PBrand: Texas InstrumentsManufacturers Part No.: CSD19536KCS
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Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.51mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₪ 873.60

₪ 33.60 Each (Supplied in a Tube) (ex VAT)

₪ 1,022.11

₪ 39.312 Each (Supplied in a Tube) (inc. VAT)

Texas Instruments N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

26

Available in multiples of 2
26₪ 873.60
28₪ 940.80
30₪ 1,008.00
32₪ 1,075.20
34₪ 1,142.40
36₪ 1,209.60
38₪ 1,276.80
40₪ 1,344.00
42₪ 1,411.20
44₪ 1,478.40
46₪ 1,545.60
48₪ 1,612.80
50₪ 1,680.00
52₪ 1,747.20
54₪ 1,814.40

₪ 873.60

₪ 33.60 Each (Supplied in a Tube) (ex VAT)

₪ 1,022.11

₪ 39.312 Each (Supplied in a Tube) (inc. VAT)

Texas Instruments N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

26

Available in multiples of 2
26₪ 873.60
28₪ 940.80
30₪ 1,008.00
32₪ 1,075.20
34₪ 1,142.40
36₪ 1,209.60
38₪ 1,276.80
40₪ 1,344.00
42₪ 1,411.20
44₪ 1,478.40
46₪ 1,545.60
48₪ 1,612.80
50₪ 1,680.00
52₪ 1,747.20
54₪ 1,814.40

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.51mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more