Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS

RS Stock No.: 145-1334Brand: Texas InstrumentsManufacturers Part No.: CSD19534KCS
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Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₪ 497.25

₪ 9.945 Each (In a Tube of 50) (ex VAT)

₪ 581.78

₪ 11.636 Each (In a Tube of 50) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS

50

Available in multiples of 50
50₪ 497.25
100₪ 994.50
150₪ 1,491.75
200₪ 1,989.00
250₪ 2,486.25
300₪ 2,983.50
350₪ 3,480.75
400₪ 3,978.00
450₪ 4,475.25
500₪ 4,972.50
550₪ 5,469.75
600₪ 5,967.00
650₪ 6,464.25
700₪ 6,961.50
750₪ 7,458.75

₪ 497.25

₪ 9.945 Each (In a Tube of 50) (ex VAT)

₪ 581.78

₪ 11.636 Each (In a Tube of 50) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS
Stock information temporarily unavailable.

50

Available in multiples of 50
50₪ 497.25
100₪ 994.50
150₪ 1,491.75
200₪ 1,989.00
250₪ 2,486.25
300₪ 2,983.50
350₪ 3,480.75
400₪ 3,978.00
450₪ 4,475.25
500₪ 4,972.50
550₪ 5,469.75
600₪ 5,967.00
650₪ 6,464.25
700₪ 6,961.50
750₪ 7,458.75

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more