Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
16.51mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 11.257
Each (In a Pack of 5) (ex VAT)
₪ 13.171
Each (In a Pack of 5) (inc VAT)
5
₪ 11.257
Each (In a Pack of 5) (ex VAT)
₪ 13.171
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 11.257 | ₪ 56.29 |
25 - 45 | ₪ 9.174 | ₪ 45.87 |
50+ | ₪ 9.132 | ₪ 45.66 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
16.51mm
Product details