N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 21.41
Each (In a Pack of 2) (ex VAT)
₪ 25.05
Each (In a Pack of 2) (inc VAT)
2
₪ 21.41
Each (In a Pack of 2) (ex VAT)
₪ 25.05
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | ₪ 21.41 | ₪ 42.82 |
10 - 48 | ₪ 17.284 | ₪ 34.57 |
50 - 248 | ₪ 15.774 | ₪ 31.55 |
250 - 498 | ₪ 14.306 | ₪ 28.61 |
500+ | ₪ 12.753 | ₪ 25.51 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details