Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 8.362
Each (Supplied on a Reel) (ex VAT)
₪ 9.784
Each (Supplied on a Reel) (inc VAT)
5
₪ 8.362
Each (Supplied on a Reel) (ex VAT)
₪ 9.784
Each (Supplied on a Reel) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 20 | ₪ 8.362 | ₪ 41.81 |
25 - 45 | ₪ 5.943 | ₪ 29.72 |
50 - 245 | ₪ 5.286 | ₪ 26.43 |
250 - 495 | ₪ 4.601 | ₪ 23.00 |
500+ | ₪ 4.153 | ₪ 20.77 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details