Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
118 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Series
NexFET
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 14.418
Each (Supplied in a Tube) (ex VAT)
₪ 16.869
Each (Supplied in a Tube) (inc VAT)
5
₪ 14.418
Each (Supplied in a Tube) (ex VAT)
₪ 16.869
Each (Supplied in a Tube) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
5 - 45 | ₪ 14.418 | ₪ 72.09 |
50 - 95 | ₪ 11.886 | ₪ 59.43 |
100 - 245 | ₪ 10.852 | ₪ 54.26 |
250 - 495 | ₪ 9.803 | ₪ 49.01 |
500+ | ₪ 8.684 | ₪ 43.42 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
118 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Series
NexFET
Product details