Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
118 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Series
NexFET
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
Please check again later.
₪ 14.487
Each (In a Pack of 5) (ex VAT)
₪ 16.95
Each (In a Pack of 5) (inc VAT)
5
₪ 14.487
Each (In a Pack of 5) (ex VAT)
₪ 16.95
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 14.487 | ₪ 72.44 |
50 - 95 | ₪ 11.942 | ₪ 59.71 |
100 - 245 | ₪ 10.922 | ₪ 54.61 |
250 - 495 | ₪ 9.873 | ₪ 49.36 |
500+ | ₪ 8.754 | ₪ 43.77 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
118 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Series
NexFET
Product details