Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
Please check again later.
₪ 17.662
Each (Supplied in a Tube) (ex VAT)
₪ 20.665
Each (Supplied in a Tube) (inc VAT)
5
₪ 17.662
Each (Supplied in a Tube) (ex VAT)
₪ 20.665
Each (Supplied in a Tube) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
5 - 45 | ₪ 17.662 | ₪ 88.31 |
50 - 95 | ₪ 14.264 | ₪ 71.32 |
100 - 245 | ₪ 11.509 | ₪ 57.54 |
250 - 495 | ₪ 10.977 | ₪ 54.89 |
500+ | ₪ 10.446 | ₪ 52.23 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Product details