Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
₪ 230.25
₪ 9.21 Each (Supplied on a Reel) (ex VAT)
₪ 269.39
₪ 10.776 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
₪ 230.25
₪ 9.21 Each (Supplied on a Reel) (ex VAT)
₪ 269.39
₪ 10.776 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
25 - 120 | ₪ 9.21 | ₪ 46.05 |
125 - 620 | ₪ 7.395 | ₪ 36.98 |
625 - 1245 | ₪ 5.85 | ₪ 29.25 |
1250+ | ₪ 4.665 | ₪ 23.32 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details