Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A

RS Stock No.: 827-4883PBrand: Texas InstrumentsManufacturers Part No.: CSD18504Q5A
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₪ 230.25

₪ 9.21 Each (Supplied on a Reel) (ex VAT)

₪ 269.39

₪ 10.776 Each (Supplied on a Reel) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
Select packaging type

₪ 230.25

₪ 9.21 Each (Supplied on a Reel) (ex VAT)

₪ 269.39

₪ 10.776 Each (Supplied on a Reel) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
25 - 120₪ 9.21₪ 46.05
125 - 620₪ 7.395₪ 36.98
625 - 1245₪ 5.85₪ 29.25
1250+₪ 4.665₪ 23.32

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more