Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
₪ 51.22
₪ 10.245 Each (In a Pack of 5) (ex VAT)
₪ 59.93
₪ 11.987 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 51.22
₪ 10.245 Each (In a Pack of 5) (ex VAT)
₪ 59.93
₪ 11.987 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₪ 10.245 | ₪ 51.22 |
| 25 - 120 | ₪ 9.24 | ₪ 46.20 |
| 125 - 620 | ₪ 7.425 | ₪ 37.12 |
| 625 - 1245 | ₪ 5.88 | ₪ 29.40 |
| 1250+ | ₪ 4.695 | ₪ 23.48 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details


