N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
7.4 nC
Width
3.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Series
NexFET
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 7.412
Each (In a Pack of 10) (ex VAT)
₪ 8.672
Each (In a Pack of 10) (inc VAT)
10
₪ 7.412
Each (In a Pack of 10) (ex VAT)
₪ 8.672
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | ₪ 7.412 | ₪ 74.12 |
30 - 50 | ₪ 6.712 | ₪ 67.12 |
60 - 240 | ₪ 5.985 | ₪ 59.85 |
250 - 490 | ₪ 5.216 | ₪ 52.16 |
500+ | ₪ 4.685 | ₪ 46.85 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
7.4 nC
Width
3.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Series
NexFET
Height
1.1mm
Product details