Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
₪ 55.95
₪ 5.595 Each (In a Pack of 10) (ex VAT)
₪ 65.46
₪ 6.546 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 55.95
₪ 5.595 Each (In a Pack of 10) (ex VAT)
₪ 65.46
₪ 6.546 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | ₪ 5.595 | ₪ 55.95 |
| 50 - 190 | ₪ 4.38 | ₪ 43.80 |
| 200 - 490 | ₪ 3.495 | ₪ 34.95 |
| 500+ | ₪ 3.465 | ₪ 34.65 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details


