Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
Please check again later.
₪ 13.914
Each (In a Pack of 5) (ex VAT)
₪ 16.279
Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 13.914
Each (In a Pack of 5) (ex VAT)
₪ 16.279
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 13.914 | ₪ 69.57 |
50 - 95 | ₪ 11.257 | ₪ 56.29 |
100+ | ₪ 9.187 | ₪ 45.94 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details