Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
₪ 71.62
₪ 14.325 Each (In a Pack of 5) (ex VAT)
₪ 83.80
₪ 16.76 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 71.62
₪ 14.325 Each (In a Pack of 5) (ex VAT)
₪ 83.80
₪ 16.76 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | ₪ 14.325 | ₪ 71.62 |
| 50 - 95 | ₪ 11.49 | ₪ 57.45 |
| 100+ | ₪ 9.42 | ₪ 47.10 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Product details


