Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Width
2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
₪ 150.00
₪ 3.00 Each (Supplied on a Reel) (ex VAT)
₪ 175.50
₪ 3.51 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
₪ 150.00
₪ 3.00 Each (Supplied on a Reel) (ex VAT)
₪ 175.50
₪ 3.51 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | ₪ 3.00 | ₪ 30.00 |
| 100 - 240 | ₪ 2.28 | ₪ 22.80 |
| 250 - 490 | ₪ 2.265 | ₪ 22.65 |
| 500+ | ₪ 2.25 | ₪ 22.50 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Width
2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details


