Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 3.678
Each (In a Pack of 10) (ex VAT)
₪ 4.303
Each (In a Pack of 10) (inc VAT)
10
₪ 3.678
Each (In a Pack of 10) (ex VAT)
₪ 4.303
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | ₪ 3.678 | ₪ 36.78 |
50 - 90 | ₪ 2.825 | ₪ 28.25 |
100 - 240 | ₪ 2.154 | ₪ 21.54 |
250 - 490 | ₪ 2.14 | ₪ 21.40 |
500+ | ₪ 2.126 | ₪ 21.26 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Product details