Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Product details
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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₪ 2.433
Each (In a Pack of 10) (ex VAT)
₪ 2.847
Each (In a Pack of 10) (inc VAT)
10
₪ 2.433
Each (In a Pack of 10) (ex VAT)
₪ 2.847
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 240 | ₪ 2.433 | ₪ 24.33 |
250+ | ₪ 1.398 | ₪ 13.98 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Product details