Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Length
2.9mm
Height
0.95mm
Forward Diode Voltage
1V
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₪ 1.231
Each (On a Reel of 3000) (ex VAT)
₪ 1.44
Each (On a Reel of 3000) (inc VAT)
3000
₪ 1.231
Each (On a Reel of 3000) (ex VAT)
₪ 1.44
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | ₪ 1.231 | ₪ 3,691.78 |
6000 - 6000 | ₪ 1.147 | ₪ 3,440.06 |
9000 - 9000 | ₪ 1.119 | ₪ 3,356.16 |
12000+ | ₪ 1.077 | ₪ 3,230.30 |
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Length
2.9mm
Height
0.95mm
Forward Diode Voltage
1V