Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
Country of Origin
China
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
₪ 3,536.25
₪ 353.62 Each (Supplied in a Tube) (ex VAT)
₪ 4,137.41
₪ 413.74 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 3,536.25
₪ 353.62 Each (Supplied in a Tube) (ex VAT)
₪ 4,137.41
₪ 413.74 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 10 - 49 | ₪ 353.62 |
| 50 - 149 | ₪ 342.74 |
| 150 - 499 | ₪ 311.13 |
| 500+ | ₪ 295.89 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
Country of Origin
China
Product details


