Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
₪ 377.70
₪ 377.70 Each (ex VAT)
₪ 441.91
₪ 441.91 Each (inc. VAT)
Standard
1
₪ 377.70
₪ 377.70 Each (ex VAT)
₪ 441.91
₪ 441.91 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | ₪ 377.70 |
| 10 - 49 | ₪ 353.86 |
| 50 - 149 | ₪ 342.98 |
| 150 - 499 | ₪ 311.37 |
| 500+ | ₪ 296.13 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
Product details


