STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 STW56N60DM2

RS Stock No.: 111-6485Brand: STMicroelectronicsManufacturers Part No.: STW56N60DM2
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Technical documents

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

MDmesh DM2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

360W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

-5.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

90nC

Maximum Operating Temperature

150°C

Width

5.15 mm

Standards/Approvals

No

Height

20.15mm

Length

15.75mm

Automotive Standard

No

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 91.80

₪ 91.80 Each (ex VAT)

₪ 107.41

₪ 107.41 Each (inc. VAT)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 STW56N60DM2
Select packaging type

₪ 91.80

₪ 91.80 Each (ex VAT)

₪ 107.41

₪ 107.41 Each (inc. VAT)

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 STW56N60DM2

Stock information temporarily unavailable.

Select packaging type

quantityUnit price
1 - 9₪ 91.80
10 - 29₪ 79.04
30 - 89₪ 76.72
90 - 299₪ 71.50
300+₪ 65.97

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

MDmesh DM2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

360W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

-5.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

90nC

Maximum Operating Temperature

150°C

Width

5.15 mm

Standards/Approvals

No

Height

20.15mm

Length

15.75mm

Automotive Standard

No

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more