Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
60mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
360W
Maximum Gate Source Voltage Vgs
25 V
Forward Voltage Vf
-5.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
90nC
Maximum Operating Temperature
150°C
Width
5.15 mm
Standards/Approvals
No
Height
20.15mm
Length
15.75mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 91.80
₪ 91.80 Each (ex VAT)
₪ 107.41
₪ 107.41 Each (inc. VAT)
Standard
1
₪ 91.80
₪ 91.80 Each (ex VAT)
₪ 107.41
₪ 107.41 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 9 | ₪ 91.80 |
| 10 - 29 | ₪ 79.04 |
| 30 - 89 | ₪ 76.72 |
| 90 - 299 | ₪ 71.50 |
| 300+ | ₪ 65.97 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
60mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
360W
Maximum Gate Source Voltage Vgs
25 V
Forward Voltage Vf
-5.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
90nC
Maximum Operating Temperature
150°C
Width
5.15 mm
Standards/Approvals
No
Height
20.15mm
Length
15.75mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


