Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
79mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
70nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 80.34
₪ 80.34 Each (ex VAT)
₪ 94.00
₪ 94.00 Each (inc. VAT)
Standard
1
₪ 80.34
₪ 80.34 Each (ex VAT)
₪ 94.00
₪ 94.00 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 9 | ₪ 80.34 |
| 10 - 29 | ₪ 69.27 |
| 30 - 179 | ₪ 67.05 |
| 180 - 599 | ₪ 59.62 |
| 600+ | ₪ 53.19 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-247
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
79mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
70nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


