Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
FDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
80.4 nC @ 10 V
Height
20.15mm
Product details
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 765.90
₪ 76.59 Each (Supplied in a Tube) (ex VAT)
₪ 896.10
₪ 89.61 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 765.90
₪ 76.59 Each (Supplied in a Tube) (ex VAT)
₪ 896.10
₪ 89.61 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| quantity | Unit price |
|---|---|
| 10 - 49 | ₪ 76.59 |
| 50 - 99 | ₪ 74.04 |
| 100 - 199 | ₪ 65.32 |
| 200+ | ₪ 62.97 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
FDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
80.4 nC @ 10 V
Height
20.15mm
Product details


