Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 1,449.00
₪ 48.30 Each (In a Tube of 30) (ex VAT)
₪ 1,695.33
₪ 56.511 Each (In a Tube of 30) (inc. VAT)
30
₪ 1,449.00
₪ 48.30 Each (In a Tube of 30) (ex VAT)
₪ 1,695.33
₪ 56.511 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | ₪ 48.30 | ₪ 1,449.00 |
| 60 - 90 | ₪ 46.59 | ₪ 1,397.70 |
| 120 - 270 | ₪ 43.215 | ₪ 1,296.45 |
| 300 - 570 | ₪ 41.49 | ₪ 1,244.70 |
| 600+ | ₪ 37.905 | ₪ 1,137.15 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Product details


