STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 STW26NM60N

RS Stock No.: 103-1991Brand: STMicroelectronicsManufacturers Part No.: STW26NM60N
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

₪ 1,449.00

₪ 48.30 Each (In a Tube of 30) (ex VAT)

₪ 1,695.33

₪ 56.511 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 STW26NM60N

₪ 1,449.00

₪ 48.30 Each (In a Tube of 30) (ex VAT)

₪ 1,695.33

₪ 56.511 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 STW26NM60N

Stock information temporarily unavailable.

quantityUnit pricePer Tube
30 - 30₪ 48.30₪ 1,449.00
60 - 90₪ 46.59₪ 1,397.70
120 - 270₪ 43.215₪ 1,296.45
300 - 570₪ 41.49₪ 1,244.70
600+₪ 37.905₪ 1,137.15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more