STMicroelectronics Type N-Channel MOSFET, 10.5 A, 800 V Enhancement, 3-Pin TO-247

RS Stock No.: 920-8859Brand: STMicroelectronicsManufacturers Part No.: STW12NK80Z
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.5A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

190W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

87nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 1,022.85

₪ 34.095 Each (In a Tube of 30) (ex VAT)

₪ 1,196.73

₪ 39.891 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 10.5 A, 800 V Enhancement, 3-Pin TO-247

₪ 1,022.85

₪ 34.095 Each (In a Tube of 30) (ex VAT)

₪ 1,196.73

₪ 39.891 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 10.5 A, 800 V Enhancement, 3-Pin TO-247

Stock information temporarily unavailable.

quantityUnit pricePer Tube
30 - 30₪ 34.095₪ 1,022.85
60 - 90₪ 31.665₪ 949.95
120 - 270₪ 29.865₪ 895.95
300 - 570₪ 28.815₪ 864.45
600+₪ 26.205₪ 786.15

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.5A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

190W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

87nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more