Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
₪ 1,022.85
₪ 34.095 Each (In a Tube of 30) (ex VAT)
₪ 1,196.73
₪ 39.891 Each (In a Tube of 30) (inc. VAT)
30
₪ 1,022.85
₪ 34.095 Each (In a Tube of 30) (ex VAT)
₪ 1,196.73
₪ 39.891 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | ₪ 34.095 | ₪ 1,022.85 |
60 - 90 | ₪ 31.665 | ₪ 949.95 |
120 - 270 | ₪ 29.865 | ₪ 895.95 |
300 - 570 | ₪ 28.815 | ₪ 864.45 |
600+ | ₪ 26.205 | ₪ 786.15 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Product details