Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 215.55
₪ 7.185 Each (Supplied on a Reel) (ex VAT)
₪ 252.19
₪ 8.406 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
30
₪ 215.55
₪ 7.185 Each (Supplied on a Reel) (ex VAT)
₪ 252.19
₪ 8.406 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
30
| quantity | Unit price | Per Reel |
|---|---|---|
| 30 - 50 | ₪ 7.185 | ₪ 71.85 |
| 60 - 110 | ₪ 6.69 | ₪ 66.90 |
| 120 - 230 | ₪ 6.15 | ₪ 61.50 |
| 240+ | ₪ 6.135 | ₪ 61.35 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


