Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 82.20
₪ 8.22 Each (In a Pack of 10) (ex VAT)
₪ 96.17
₪ 9.617 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 82.20
₪ 8.22 Each (In a Pack of 10) (ex VAT)
₪ 96.17
₪ 9.617 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 20 | ₪ 8.22 | ₪ 82.20 |
| 30 - 50 | ₪ 7.20 | ₪ 72.00 |
| 60 - 110 | ₪ 6.705 | ₪ 67.05 |
| 120 - 230 | ₪ 6.165 | ₪ 61.65 |
| 240+ | ₪ 6.15 | ₪ 61.50 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


