Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Height
1.65mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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₪ 7.649
Each (Supplied on a Reel) (ex VAT)
₪ 8.949
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
₪ 7.649
Each (Supplied on a Reel) (ex VAT)
₪ 8.949
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
10 - 20 | ₪ 7.649 | ₪ 76.49 |
30 - 50 | ₪ 6.698 | ₪ 66.98 |
60 - 110 | ₪ 6.237 | ₪ 62.37 |
120 - 230 | ₪ 5.733 | ₪ 57.33 |
240+ | ₪ 5.719 | ₪ 57.19 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Height
1.65mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.