Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Height
1.65mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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₪ 82.20
₪ 8.22 Each (In a Pack of 10) (ex VAT)
₪ 96.17
₪ 9.617 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 82.20
₪ 8.22 Each (In a Pack of 10) (ex VAT)
₪ 96.17
₪ 9.617 Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | ₪ 8.22 | ₪ 82.20 |
30 - 50 | ₪ 7.20 | ₪ 72.00 |
60 - 110 | ₪ 6.705 | ₪ 67.05 |
120 - 230 | ₪ 6.165 | ₪ 61.65 |
240+ | ₪ 6.15 | ₪ 61.50 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Height
1.65mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.