Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
Type P
Product Type
MOSFET
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
3.04mm
Width
1.75 mm
Height
1.3mm
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 697.50
₪ 1.395 Each (Supplied on a Reel) (ex VAT)
₪ 816.08
₪ 1.632 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
500
₪ 697.50
₪ 1.395 Each (Supplied on a Reel) (ex VAT)
₪ 816.08
₪ 1.632 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
500
| quantity | Unit price | Per Reel |
|---|---|---|
| 500 - 950 | ₪ 1.395 | ₪ 69.75 |
| 1000+ | ₪ 1.035 | ₪ 51.75 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
Type P
Product Type
MOSFET
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
3.04mm
Width
1.75 mm
Height
1.3mm
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


