N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STMicroelectronics STR2N2VH5

RS Stock No.: 791-7876Brand: STMicroelectronicsManufacturers Part No.: STR2N2VH5
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Series

STripFET V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Width

1.75mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.3mm

Product details

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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₪ 2.475

Each (In a Pack of 10) (ex VAT)

₪ 2.896

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STMicroelectronics STR2N2VH5
Select packaging type

₪ 2.475

Each (In a Pack of 10) (ex VAT)

₪ 2.896

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STMicroelectronics STR2N2VH5
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Series

STripFET V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Width

1.75mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.3mm

Product details

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more