Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
9.15mm
Width
4.6 mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 629.25
₪ 12.585 Each (In a Tube of 50) (ex VAT)
₪ 736.22
₪ 14.724 Each (In a Tube of 50) (inc. VAT)
50
₪ 629.25
₪ 12.585 Each (In a Tube of 50) (ex VAT)
₪ 736.22
₪ 14.724 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | ₪ 12.585 | ₪ 629.25 |
| 100 - 150 | ₪ 10.245 | ₪ 512.25 |
| 200 - 450 | ₪ 9.765 | ₪ 488.25 |
| 500 - 950 | ₪ 9.27 | ₪ 463.50 |
| 1000+ | ₪ 7.755 | ₪ 387.75 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
9.15mm
Width
4.6 mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


