Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
95W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 72.30
₪ 14.46 Each (In a Pack of 5) (ex VAT)
₪ 84.59
₪ 16.918 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 72.30
₪ 14.46 Each (In a Pack of 5) (ex VAT)
₪ 84.59
₪ 16.918 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₪ 14.46 | ₪ 72.30 |
| 25 - 95 | ₪ 11.655 | ₪ 58.28 |
| 100 - 245 | ₪ 9.27 | ₪ 46.35 |
| 250 - 495 | ₪ 8.82 | ₪ 44.10 |
| 500+ | ₪ 8.31 | ₪ 41.55 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
95W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


