Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
95W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 585.00
₪ 11.70 Each (In a Tube of 50) (ex VAT)
₪ 684.45
₪ 13.689 Each (In a Tube of 50) (inc. VAT)
50
₪ 585.00
₪ 11.70 Each (In a Tube of 50) (ex VAT)
₪ 684.45
₪ 13.689 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | ₪ 11.70 | ₪ 585.00 |
| 100 - 150 | ₪ 9.285 | ₪ 464.25 |
| 200 - 450 | ₪ 8.82 | ₪ 441.00 |
| 500 - 950 | ₪ 8.34 | ₪ 417.00 |
| 1000+ | ₪ 7.035 | ₪ 351.75 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
95W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


