Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 50.70
₪ 10.14 Each (In a Pack of 5) (ex VAT)
₪ 59.32
₪ 11.864 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 50.70
₪ 10.14 Each (In a Pack of 5) (ex VAT)
₪ 59.32
₪ 11.864 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | ₪ 10.14 | ₪ 50.70 |
| 10 - 15 | ₪ 8.175 | ₪ 40.88 |
| 20 - 45 | ₪ 7.965 | ₪ 39.82 |
| 50 - 95 | ₪ 7.77 | ₪ 38.85 |
| 100+ | ₪ 6.57 | ₪ 32.85 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


