Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 113.01
₪ 56.505 Each (In a Pack of 2) (ex VAT)
₪ 132.22
₪ 66.111 Each (In a Pack of 2) (inc. VAT)
Standard
2
₪ 113.01
₪ 56.505 Each (In a Pack of 2) (ex VAT)
₪ 132.22
₪ 66.111 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | ₪ 56.505 | ₪ 113.01 |
| 20 - 248 | ₪ 45.495 | ₪ 90.99 |
| 250 - 498 | ₪ 37.98 | ₪ 75.96 |
| 500 - 998 | ₪ 34.62 | ₪ 69.24 |
| 1000+ | ₪ 29.595 | ₪ 59.19 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


