STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STP260N6F6
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
183 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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₪ 2,238.75
₪ 44.775 Each (In a Tube of 50) (ex VAT)
₪ 2,619.34
₪ 52.387 Each (In a Tube of 50) (inc. VAT)
50
₪ 2,238.75
₪ 44.775 Each (In a Tube of 50) (ex VAT)
₪ 2,619.34
₪ 52.387 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | ₪ 44.775 | ₪ 2,238.75 |
| 100 - 150 | ₪ 40.47 | ₪ 2,023.50 |
| 200 - 450 | ₪ 39.255 | ₪ 1,962.75 |
| 500 - 950 | ₪ 27.96 | ₪ 1,398.00 |
| 1000+ | ₪ 27.735 | ₪ 1,386.75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
183 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products