Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
9.3mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
₪ 374.10
₪ 37.41 Each (Supplied in a Tube) (ex VAT)
₪ 437.70
₪ 43.77 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 374.10
₪ 37.41 Each (Supplied in a Tube) (ex VAT)
₪ 437.70
₪ 43.77 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
10 - 49 | ₪ 37.41 |
50 - 149 | ₪ 37.24 |
150 - 499 | ₪ 35.76 |
500+ | ₪ 34.30 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
9.3mm
Product details