Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 90.75
₪ 18.15 Each (In a Pack of 5) (ex VAT)
₪ 106.18
₪ 21.236 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 90.75
₪ 18.15 Each (In a Pack of 5) (ex VAT)
₪ 106.18
₪ 21.236 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | ₪ 18.15 | ₪ 90.75 |
| 10 - 45 | ₪ 14.535 | ₪ 72.68 |
| 50 - 95 | ₪ 13.32 | ₪ 66.60 |
| 100 - 245 | ₪ 12.03 | ₪ 60.15 |
| 250+ | ₪ 11.73 | ₪ 58.65 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details


