STMicroelectronics MDmesh Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220

RS Stock No.: 761-0051PBrand: STMicroelectronicsManufacturers Part No.: STP18NM60N
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

285mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 6.03

₪ 6.03 Each (Supplied in a Tube) (ex VAT)

₪ 7.06

₪ 7.06 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics MDmesh Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220
Select packaging type

₪ 6.03

₪ 6.03 Each (Supplied in a Tube) (ex VAT)

₪ 7.06

₪ 7.06 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics MDmesh Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220

Stock information temporarily unavailable.

Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

285mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more