Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20 V
Maximum Power Dissipation Pd
310W
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 52.29
₪ 26.145 Each (In a Pack of 2) (ex VAT)
₪ 61.18
₪ 30.59 Each (In a Pack of 2) (inc. VAT)
Standard
2
₪ 52.29
₪ 26.145 Each (In a Pack of 2) (ex VAT)
₪ 61.18
₪ 30.59 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | ₪ 26.145 | ₪ 52.29 |
| 10 - 18 | ₪ 21.195 | ₪ 42.39 |
| 20 - 48 | ₪ 21.03 | ₪ 42.06 |
| 50 - 98 | ₪ 20.865 | ₪ 41.73 |
| 100+ | ₪ 19.08 | ₪ 38.16 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20 V
Maximum Power Dissipation Pd
310W
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


